c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 www. ruichips .com ru 6888m n - channel advanced power mosfet mosf et features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 6 0 v gss gate - source voltage 2 5 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 50 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 240 a t c =25 c 62 t c =100 c 40 a t a =25 c 16 i d continuous drain current ( v gs =10v) t a = 7 0 c 13 t c =25 c 62.5 t c =100 c 25 w t a =25 c 4.2 p d maximum power dissipation t a = 7 0 c 2.7 ? 6 0 v/ 62 a, r ds ( on ) = 7 m ( tpy.)@ v gs =10v ? super high dense cell design ? reliable and rugged ? 100% avalanche tested ? lead free and green devices available ( roh s compliant) ? power management . absolute maximum ratings n - channel mosfe t pdfn 5x6
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 2 www. ruichips .com ru 6888m mounted on large heat sink r q jc thermal resistance - junction to case 2 c /w r q j a thermal resistance - junction to ambient 30 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 225 m j electrical characteristics ( t c =25 c unless otherwise noted) ru 6888m symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 6 0 v v ds = 6 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 2 5 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 40 a 7 8 m w d iode characteristics v sd diode forward voltage i sd = 40 a, v gs =0v 1. 2 v t rr reverse recovery time 32 ns q rr reverse recovery charge i sd = 20 a, dl sd /dt=100a/ m s 40 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 4 w c iss input capacitance 345 0 c oss output capacitance 31 0 c rss reverse transfer capacitance v gs =0v, v ds = 30 v, frequency=1.0mhz 110 pf t d ( on ) turn - on delay time 27 t r turn - on rise time 32 t d ( off ) turn - off delay time 97 t f turn - off fall time v dd = 3 0 v, r l = 1.5 w , i ds = 20 a, v gen =10v, r g = 3 w 67 ns gate charge characteristics q g total gate charge 75 q gs gate - source charge 1 8 q gd gate - drain charge v ds = 48 v, v gs =10v, i ds = 20 a 23 nc
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 3 www. ruichips .com ru 6888m notes : current is limited to 50 a by source bonding technology . pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . limited by t jmax , i as = 30 a, v dd = 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . ordering and marking information device marking package packaging quantity reel size tape width ru 6888m RU6888M pdfn 5x6 tape&reel 3000 13 12mm
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 4 www. ruichips .com ru 6888m typical char acteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 5 www. ruichips .com ru 6888m typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 6 www. ruichips .com ru 6888m typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temper ature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 7 www. ruichips .com ru 6888m avalanche test circuit a nd waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 8 www. ruichips .com ru 6888m package information pdfn 5x6 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 1.030 1.170 0.040 0.046 e2 1.600 - 0. 063 - b 0.340 0.480 0.013 0.019 e 1.270 bsc 0.050 bsc c 0.824 0.970 0.032 0.038 l 0.050 0.250 0.002 0.010 d 4.800 5.400 0.189 0.213 l1 0.380 0.500 0.015 0.020 d1 4.110 4.310 0.162 0.170 l2 0.380 0.500 0.015 0.020 d2 4.800 5.000 0.189 0.197 h 3.500 3 .700 0.138 0.146 e 5.950 6.150 0.234 0.242 i - 0.180 - 0.007 e1 5.650 5.850 0.222 0.230
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 9 www. ruichips .com ru 6888m customer service worldwide sales and service : sales@ru i chips.co m technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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